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Paper covers integration of an advanced composite high-K gate stack in the QWFET silicon substrate, enabling thin electrical oxide, low gate leakage, effective carrier confinement, and high carrier velocity in the QW channel.
Video shows storage possibilities powered by Intel® Architecture
Intel 3-D transistors manufactured at 22nm ensure the pace of technology advancement for years to come.
Visual features optimize graphics to deliver stunning and seamless PC viewing experiences.
Introducing Jasper Forest: the newest addition to the Intel® Xeon® processor family.
Minimize concerns of cost, effort, and complexity. (v.001, Oct. 2011)