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Advanced High-K Gate Dielectric for Short-Channel in QWFE Transistors on Silicon Substrate

Paper covers integration of an advanced composite high-K gate stack in the QWFET silicon substrate, enabling thin electrical oxide, low gate leakage, effective carrier confinement, and high carrier velocity in the QW channel.

Paper covers integration of an advanced composite high-K gate stack in the QWFET silicon substrate, enabling thin electrical oxide, low gate leakage, effective carrier confinement, and high carrier velocity in the QW channel.

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